SIEĆ BADAWCZA ŁUKASIEWICZ - INSTYTUT MIKROELEKTRONIKI I FOTONIKI
- Aleja Lotników 32/46, 02-668 Warszawa, Poland
- komercjalizacja@imif.lukasiewicz.gov.pl
- imif.lukasiewicz.gov.pl
Description
Łukasiewicz – Institute of Microelectronics and Photonics develops microelectronic, photonic and materials technologies that can support military systems in the areas of reconnaissance, communications, guidance, protection and radar. The Institute’s expertise encompasses the design, fabrication and integration of devices, circuits and materials for defence and dual-use applications.
The technologies under development at the Institute include:
InAs/GaSb focal plane arrays (FPAs) for mid-wave infrared (MWIR) cameras intended for surveillance, targeting and guidance systems;
silicon photodiodes, vertical-cavity surface-emitting lasers (VCSELs) and quantum cascade lasers (QCLs), with applications including detection systems, laser rangefinders and optoelectronic systems;
photonic integrated circuits (PICs) and free-space optical communications (FSOC) solutions – the integration of light sources, detectors, optical components and electronics enables the development of lightweight, energy-efficient modules, including solutions for unmanned platforms;
specialised readout integrated circuits (ROICs), application-specific integrated circuits (ASICs), and GaN-based power and radio-frequency (RF) devices, including GaN HEMT technology for radar systems;
semiconductor lasers for the photonic microphone being developed within the PIONEAR project, with potential applications in acoustic reconnaissance systems;
metal–ceramic composites for ballistic protection and a modular system for protection against biological hazards using cold plasma;
low-temperature co-fired ceramic (LTCC) technologies, including printed sensors for contamination detection and environmental monitoring, as well as low-loss ceramic substrates for RF modules, radar systems and communications systems.
Through investments supported by Poland’s National Recovery and Resilience Plan (NRRP), Łukasiewicz – IMiF is also expanding and modernising its research and technology infrastructure, thereby strengthening its capacity to conduct joint R&D activities, prototyping and technology development in cooperation with the Polish defence industry. The technologies under development may enhance the capabilities of defence systems while supporting the development of domestic technological capabilities and technological sovereignty.
The technologies under development at the Institute include:
InAs/GaSb focal plane arrays (FPAs) for mid-wave infrared (MWIR) cameras intended for surveillance, targeting and guidance systems;
silicon photodiodes, vertical-cavity surface-emitting lasers (VCSELs) and quantum cascade lasers (QCLs), with applications including detection systems, laser rangefinders and optoelectronic systems;
photonic integrated circuits (PICs) and free-space optical communications (FSOC) solutions – the integration of light sources, detectors, optical components and electronics enables the development of lightweight, energy-efficient modules, including solutions for unmanned platforms;
specialised readout integrated circuits (ROICs), application-specific integrated circuits (ASICs), and GaN-based power and radio-frequency (RF) devices, including GaN HEMT technology for radar systems;
semiconductor lasers for the photonic microphone being developed within the PIONEAR project, with potential applications in acoustic reconnaissance systems;
metal–ceramic composites for ballistic protection and a modular system for protection against biological hazards using cold plasma;
low-temperature co-fired ceramic (LTCC) technologies, including printed sensors for contamination detection and environmental monitoring, as well as low-loss ceramic substrates for RF modules, radar systems and communications systems.
Through investments supported by Poland’s National Recovery and Resilience Plan (NRRP), Łukasiewicz – IMiF is also expanding and modernising its research and technology infrastructure, thereby strengthening its capacity to conduct joint R&D activities, prototyping and technology development in cooperation with the Polish defence industry. The technologies under development may enhance the capabilities of defence systems while supporting the development of domestic technological capabilities and technological sovereignty.
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Products
Thermoelectrically Cooled 320 × 256-Pixel Type-II InAs/GaSb Superlattice Focal Plane Array
Thermoelectrically Cooled 320 × 256-Pixel Type-II InAs/GaSb Superlattice Focal Plane Array
A thermoelectrically cooled focal plane array based on a type-II InAs/GaSb superlattice, designed for mid-wave infrared imaging. Its 320 × 256-pixel resolution supports compact cameras for gas-leak detection, electronic-circuit inspection, the assessment of burns and hard-to-heal wounds, as well as surveillance, targeting and guidance systems. Compared with cryogenic solutions, a thermoelectric cooler reduces system weight and shortens the time required to reach the operating temperature.
active material: type-II InAs/GaSb superlattice; resolution: 320 × 256 pixels; spectral range: 3–5 µm; cooling: thermoelectric cooler (TEC).
Silicon Avalanche Photodiodes for Laser Rangefinders (APDs)
Silicon Avalanche Photodiodes for Laser Rangefinders (APDs)
Silicon avalanche photodiodes (APDs) are among the fastest and most sensitive silicon detectors for visible and near-infrared radiation. Their internal avalanche gain enables the detection of very weak, short optical pulses returning from a target, allowing accurate time-of-flight distance measurement. The photodiodes are designed and manufactured at Łukasiewicz – IMiF using CMOS/MEMS processes, and their parameters can be tailored to the requirements of a specific application. They are intended primarily for optoelectronic rangefinders and specialised detection systems.
material: silicon; spectral range: 350–1100 nm; distance accuracy: 1 m; measurement range: 2 m–1 km or 2 m–3 km; technology: CMOS/MEMS; production: small-batch.
Quantum Cascade Lasers (QCLs) – Compact Semiconductor Infrared Sources
Quantum Cascade Lasers (QCLs) – Compact Semiconductor Infrared Sources
Quantum cascade lasers (QCLs) are compact semiconductor sources operating in the mid- and long-wave infrared, as well as in the terahertz range. Their emission wavelength can be engineered by adjusting the thickness of the active-region layers without changing the base material system. The lasers operate in pulsed or continuous-wave mode, including at room temperature. Łukasiewicz – IMiF’s complete in-house technology line enables the emission wavelength, output power and emitter design to be tailored to user requirements. QCLs are used in spectroscopy, gas analysis, environmental monitoring, medicine, telecommunications, industry, and security and defence systems.
spectral range: 4.5–12 µm; designs: Fabry–Pérot, distributed-feedback (DFB) and coupled-cavity; geometry: ridge waveguide; form: chips or packaged lasers; mounting: epi-up or epi-down.
Vertical-Cavity Surface-Emitting Lasers (VCSELs)
Vertical-Cavity Surface-Emitting Lasers (VCSELs)
VCSELs are compact semiconductor radiation sources that emit perpendicular to the device surface. Their emission wavelength can be engineered for TDLAS gas spectroscopy, including oxygen detection in industrial and medical analysers, atomic sensors, atomic clocks, magnetometers and quantum gyroscopes, as well as optical pumping of EDFA and Er fibre amplifiers. The technology is also applicable to telecommunications and data transmission, automotive systems, LiDAR and 3D sensing. The technology line under development enables small-batch production and device customisation in close cooperation with the customer, with scientific support from Lodz University of Technology.
type: VCSEL; emission: perpendicular to the surface; scale: small-batch production; customisation: wavelength and design;
Biomimetic Ultrablack Coatings
Biomimetic Ultrablack Coatings
Biomimetic ultrablack coatings with a nanostructured, light-trapping morphology inspired by the wings of ultrablack butterflies. They provide very high optical radiation absorption and total diffuse reflectance below 1%. The coatings can be deposited at room temperature on various substrates, including silicon, steel, aluminium, glass and ceramics, as well as on 3D components. They suppress stray light and noise in optical systems, improve the performance of optoelectronic devices, and can be used for passive heating and decorative finishes.
total diffuse reflectance: below 1%; process: room-temperature deposition; substrates: including Si, steel, Al, glass and ceramics; surfaces: flat and 3D.
